A model was presented for B diffusion gettering of Fe in Si during thermal processing. In this model, both the segregation of Fe due to high B doping concentration and heterogeneous precipitation of Fe to the surface of the wafer were taken into account. It was shown, by comparing simulated results withexperimental ones, that this model could be used to estimate B diffusion gettering efficiency of Fe under a variety of processing conditions.

Modeling Boron Diffusion Gettering of Iron in Silicon Solar Cells. A.Haarahiltunen, H.Talvitie, H.Savin, M.Yli-Koski, M.I.Asghar, J.Sinkkonen: Applied Physics Letters, 2008, 92[2], 021902