The effects of surface proximity and B concentration upon end-of-range defect formation during non-melt laser annealing in pre-amorphized Si were studied. These effects were analyzed by observing the activation and diffusion of an ultra-shallow B implant, using Hall effect and secondary ion mass spectrometry measurements. By adjusting the pre-amorphizing implant and laser annealing conditions, B deactivation and diffusion were minimized. This was attributed to a combination of enhanced dissolution of end-of-range defects and preferential formation of B-interstitial clusters due to the surface proximity and high B concentration, respectively.

Surface Proximity and Boron Concentration Effects on End-of-Range Defect Formation during Nonmelt Laser Annealing. J.A.Sharp, A.J.Smith, R.P.Webb, K.J.Kirkby, N.E.B.Cowern, D.Giubertoni, S.Gennaro, M.Bersani, M.A.Foad, P.F.Fazzini, F.Cristiano: Applied Physics Letters, 2008, 92[8], 082109