The F effect in crystalline Si was quantified by monitoring defects and B diffusion in samples implanted with 25keV F+ and/or 40keV Si+. It was estimated that about +0.4 Si interstitials were generated per implanted F+ ion, in agreement with the value resulting from the net separation of Frenkel pairs. For short annealing times, B diffusion was lower when F+ was co-implanted with Si+ than when only Si+ was implanted, while for longer annealing times, B diffusion was higher. This was consistent with a lower but longer-lasting Si interstitial supersaturation set by the additional defects generated by the F+ implant.

Si Interstitial Contribution of F+ Implants in Crystalline Si. P.López, L.Pelaz, R.Duffy, P.Meunier-Beillard, F.Roozeboom, K.van der Tak, P.Breimer, J.G.M.van Berkum, M.A.Verheijen, M.Kaiser: Journal of Applied Physics, 2008, 103[9], 093538