The 300keV C+ ion implantation of Si(100) wafers was carried out at 400, 500, 550, 600, 650 and 700C. Depth profiles of C were determined by means of resonant Rutherford back-scattering spectrometry using the 12C(α,α)12C resonant reaction with an α-particle energy of 4.27MeV. The concentration of the implanted C at the surface, as a function of the inverse implantation temperature, exhibited an Arrhenius behaviour. The activation energy for the diffusion of C in Si was found to be 0.434eV. This was smaller than the activation energy (0.88eV) for C diffusion in Si under equilibrium conditions. The possible mechanism of C diffusion in Si under these irradiation conditions, where large concentrations of vacancies and interstitials were produced, was considered and it was found that the C diffusion under irradiation conditions could be due to the drag of C towards the surface by the vacancy flux.

Resonant Rutherford Backscattering Spectrometry for Carbon Diffusion in Silicon. K.Saravanan, B.K.Panigrahi, S.Amirthapandian, K.G.M.Nair: Nuclear Instruments and Methods in Physics Research B, 2008, 266[8], 1502-6