It was recalled that flash-assisted rapid thermal processing could significantly reduce B diffusion, while ensuring B activation at levels beyond the limits of traditional rapid thermal annealing. However, the efficiency of flash-assisted rapid thermal processing for defect annealing still required systematic examination. Here, a (100) Si wafer was implanted with 500eV B ions to a fluence of 1015/cm2. Flash-assisted rapid thermal processing was performed using peak temperatures ranging from 1100 to 1300C for approximately 1ms. High-resolution transmission electron microscopy and secondary ion mass spectrometry were used to characterize as-implanted and annealed samples. The results showed that flash-assisted rapid thermal processing at 1250C could effectively anneal defects without causing B tail diffusion.

Defect Characterization in Boron Implanted Silicon after Flash Annealing. L.Zhu, J.Chan, S.McCoy, J.Gelpey, B.Guo, K.Shim, N.D.Theodore, M.Martin, J.Carter, M.Hollander, L.Shao: Nuclear Instruments and Methods in Physics Research B, 2008, 266[10], 2479-82