Simultaneous interfacial misfit array formation, together with antiphase domain suppression, in highly mismatched (∆a0/a0=13%) AlSb grown onto a 5° miscut Si (001) substrate was described. Strain energy from the AlSb/Si heterojunction was accommodated by a self-assembled 2-dimensional array of pure 90° dislocations confined to the interface. The 13% lattice mismatch established an AlSb/Si interfacial misfit period of ~3.46nm. This interfacial misfit spacing was well-matched to the step-length of the 5° miscut Si (001) substrate. Furthermore, the miscut substrate geometry suppressed antiphase domain formation due to the double step-height. The resultant bulk material had both a very low defect density (~7 x 105/cm2) and a very low antiphase domain density (~103/cm2), as confirmed by transmission electron microscope imaging.

Simultaneous Interfacial Misfit Array Formation and Antiphase Domain Suppression on Miscut Silicon Substrate. S.H.Huang, G.Balakrishnan, A.Khoshakhlagh, L.R.Dawson, D.L.Huffaker: Applied Physics Letters, 2008, 93[7], 071102