By considering recently computed formation and migration energies of kinks on non-dissociated dislocations, the relative mobilities of glide partial and shuffle perfect dislocations in Si were compared. It was found that the latter should be more mobile over the available stress range, invalidating the model of a stress-driven transition between shuffle and glide dislocations.

Dislocation Motion in Silicon - the Shuffle-Glide Controversy Revisited. L.Pizzagalli, P.Beauchamp: Philosophical Magazine Letters, 2008, 88[6], 421-7