Dislocations in a Si single crystal, introduced by 3-point bending at high temperatures were observed by electron tomography in annular dark field-scanning transmission electron microscopy (ADF-STEM). Commercially available p-type (001) single crystal wafers were employed. An ADF STEM tilt series was acquired from -60° to +60° in tilt range, with 2° tilt steps. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. The observed dislocations were reconstructed by simultaneous interactive reconstruction techniques, revealing a 3-D configuration of dislocations introduced by the 3-point bending.

Three-Dimensional Observation of Dislocations by Electron Tomography in a Silicon Crystal. M.Tanaka, M.Honda, M.Mitsuhara, S.Hata, K.Kaneko, K.Higashida: Materials Transactions, 2008, 49[9], 1953-6