Possible suppression of the formation of residual extended defects in B-implanted material was studied by using a method that combined the effects of a threshold dose and annihilation of point defects upon substitutional impurities. The implantation conditions were determined under which dislocation-free ion-doped Si layers were formed.

Development of Dislocation-Free Ion-Doped Silicon Layers. V.I.Plebanovich, A.I.Belous, A.R.Chelyadinskiĭ, V.B.Odzhaev: Physics of the Solid State, 2008, 50[8], 1433-7