The kinetics of decomposition of a solid solution of O in Czochralski-grown Si was investigated by using X-ray diffractometry. The samples were annealed for various times at 900C. A technique for processing X-ray diffraction data was proposed. Portions of the size and concentration distribution curves for O-containing precipitates and dislocation loops were obtained.

Size and Concentration Distributions of X-ray Scattering Centers in Annealed Cz -Si. N.N.Novikov, P.A.Teselko, O.V.Mikhalyuk: Physics of the Solid State, 2008, 50[7], 1246-9