An atomistic model for self-interstitial extended defects was presented. The model was able to predict a wide variety of experimental results by using a limited set of assumptions concerning the shape and emission frequency of extended defects, and taking as parameters the interstitial binding energies of extended defects versus their size. The model accounted for the entire extended defect evolution, from initial small irregular clusters to {311} defects and to the more stable dislocation loops. It predicted the extended defect dissolution, supersaturation and defect size evolution with time, and took into account of the thermally activated transformation of {311} defects into dislocation loops. Moreover, the model was also used to explore a two-phase exponential decay observed in the dissolution of {311} defects.

From Point Defects to Dislocation Loops - a Comprehensive Modelling Framework for Self-Interstitial Defects in Silicon. I.Martin-Bragado, I.Avci, N.Zographos, M.Jaraiz, P.Castrillo: Solid-State Electronics, 2008, 52[9], 1430-6