The lifetime distribution of defect photoluminescence (PL) in a-Si:H was analyzed quantitatively by obtaining a characteristic lifetime for the distribution. The generation rate dependence and the temperature variation of the characteristic lifetime were obtained for the defect PL. Decrease of the lifetime with increasing generation rate, i.e., the nature of non-geminate recombination, was observed for the defect PL of 0.83 and 0.95eV. Temperature variation of the characteristic lifetime of the PL has also been studied. The radiative recombination rate weakly depends on temperature in the case of 0.83eV while it increased with increasing temperature in the case of 0.95–1.46eV. Changes of the radiative recombination processes with increasing temperature were considered.

Analysis of Lifetime Distribution of Defect Luminescence in Hydrogenated Amorphous Silicon. C.Ogihara, X.Yu, K.Morigaki: Journal of Non-Crystalline Solids, 2008, 354[19-25], 2121-5