The Seeger and Chik model of extended point defects in Si crystals at high temperatures was studied on the basis of experimental results on the diffusion constant of vacancies at high temperature and the vacancy formation energy. It was show, that the application of the extended model to the recombination of a vacancy and an interstitial was unsuitable, by pointing out the error in the interpretation of experimental results.

On the Extended Point Defect Model in Si Crystals at High Temperature. M.Suezawa, I.Yonenaga: Japanese Journal of Applied Physics, 2008, 47, 7117-8