The influence of the type and concentration of a dopant (P, Sb, B) on the dynamics of the transformation of a system of structural (intrinsic and radiation-induced) defects of silicon under low-intensity electron irradiation was investigated. A qualitative model was proposed for the formation of the complexes of secondary radiation defects responsible for the maxima of beta-induced softening of silicon single crystals.

Influence of the Type and Concentration of a Dopant on the Dynamics of the Beta-Induced Variation in the Microhardness of Silicon. Y.I.Golovin, A.A.Dmitrievskiĭ, N.Y.Suchkova: Physics of the Solid State, 2008, 50[1], 25-7