Conductivities of quasi-1-dimensional metallic atomic-chain arrays of Si(553)-Au and Si(111)4x1-In surfaces were measured by a rotational square micro-4-point probe method. This method provided the conductivity along the atomic chains (σ||) and that across them (σ┴) separately. While the measured σ|| of the 4x1-In was nearly half of the σ|| expected from the surface-state band structure, the σ|| of the Si(553)-Au was more than 1 order of magnitude smaller than the value expected from the bands. This was attributed to dense intrinsic point defects on the Si(553)-Au. It was demonstrated that point defects on the atomic chains really decreased the σ|| value by intentionally introducing defects on the 4x1-In with O adsorption.

Influence of Defects on Transport in Quasi-One-Dimensional Arrays of Chains of Metal Atoms on Silicon. H.Okino, I.Matsuda, R.Hobara, S.Hasegawa, Y.Kim, G.Lee: Physical Review B, 2007, 76[19], 195418 (4pp)