In order to study the formation of interstitials and vacancies during the oxidation of Si crystals, a quenching method was applied: oxidation at high temperatures in mixed water vapor and H2, followed by quenching into water. Contrary to expectations, the vacancy concentration was higher than that of the thermal equilibrium during the short time of oxidation.

Vacancy Formation during Oxidation of Silicon Crystal Surface. M.Suezawa, Y.Yamamoto, M.Suemitsu, N.Usami, I.Yonenaga: Applied Physics Letters, 2008, 93[10], 101904