In the work of Janson et al., an experimental study of deuterium (2H) diffusion in B- and Al-doped silicon carbide (SiC) was performed. A trap-limited diffusion model was used as a basis for analysis. Using the same model, the concept was introduced here of a dynamic reaction front, namely, a distinctive, well-defined zone, to which the reaction of the D-dopant complex formation was confined. This zone lies between the already-deuterated and the non-deuterated regions and penetrates gradually into the specimen. Analytical expressions were obtained for the spatial profiles of the free and complexed D and for the reaction rate profiles. The analysis predicts that the reaction zone width initially remains constant as the zone progresses into the sample; yet, after a certain time, the zone starts to widen proportionally to the square root of time. An alternative method of experimental analysis was proposed, in which the reaction zone position and width as functions of time were measured. This was expected to yield the same process parameters, as those determined by using the method of Janson et al.

Hydrogen Diffusion in Acceptor-Doped Silicon Carbide - Implementation of the Reaction Zone Concept. M.Sinder, Z.Burshtein, J.Pelleg: Physical Review B, 2008, 77[9], 094128 (8pp)