The criteria for a reasonable choice of alternative to (00•1) seed orientation were considered. The growth conditions necessary to produce bulk 6H- and 4H-SiC crystals on rhombohedral (01•n) plane seeds in the PVT process were presented. Specific defect structures in such crystals were described in relation to growth conditions. Liquid phase epitaxial growth using high-temperature Si based flux and rhombohedral plane seeds was compared to liquid phase epitaxy on basal plane seeds. In both bulk and epitaxial growth processes, the employment of rhombohedral plane seed offers important advantages.

Bulk and Epitaxial Growth of Micropipe-Free Silicon Carbide on Basal and Rhombohedral Plane Seeds. B.M.Epelbaum, O.Filip, A.Winnacker: Physica Status Solidi B, 2008, 245[7], 1257-71