Research on the advanced bulk crystal growth of SiC was reviewed. A brief review highlighted the benefits of the so-called modified physical vapor transport technique which used an additional gas pipe for fine tuning of the growth cell of a conventional physical vapor transport set-up with additional gases. The main emphasis was laid on a systematic dislocation evolution study for various growth parameter sets. Besides doping, growth temperature was considered. Two main results were found. In p-type SiC, irrespective of the incorporation of Al or B acceptors, basal plane dislocations appeared less pronounced or were even absent compared to n-type SiC. Growth at elevated seed temperatures (i.e. 2300C and higher) was beneficial for low dislocation densities.

Bulk Growth of SiC - Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution. S.A.Sakwe, M.Stockmeier, P.Hens, R.Müller, D.Queren, U.Kunecke, K.Konias, R.Hock, A.Magerl, M.Pons, A.Winnacker, P.Wellmann: Physica Status Solidi B, 2008, 245[7], 1239-56