SiC p-i-n diodes exhibit an increase in the voltage drop under forward bias which was linked with the increased mobility of partial dislocations. Through first-principles calculations, the Si(g) and C(g) core 90° partials in 4H-SiC were investigated. It was shown that both dislocations could sustain the asymmetrical and symmetrical reconstructions along the dislocation line. The latter reconstructions were always electrically active with a half-filled metallic band and were always more likely to migrate with substantially lower activation energies. Furthermore, was suggested that, under forward bias, the 90° partials were less mobile than the 30° partial dislocations.

Electrical Activity and Migration of 90° Partial Dislocations in SiC. G.Savini, M.I.Heggie, S.Öberg, P.R.Briddon: New Journal of Physics, 2007, 9, 6