200keV hydrogen implantation was performed in order to investigate the formation of electrically active hydrogen-related defects in Al-doped 4H-SiC epitaxial layers. Samples were annealed at 100 to 1200C for 0.25h and capacitance–voltage (C–V) profiling was employed to study the passivating effects of hydrogen. Eight electrically active hole traps were found by means of deep level transient spectroscopy and the study of their thermal stability, as well as their depth profiles, revealed the possible formation of an electrically active hydrogen-related center.

Evidence for a Hydrogen-Related Defect in Implanted p-Type 4H-SiC. G.Alfieri, T.Kimoto: New Journal of Physics, 2008, 10[7], 073017 (7pp)