The structure determination of intrinsic defects in 4H-SiC, 6H-SiC and 3C-SiC by means of EPR was based upon measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction could be determined for major atoms comprising a defect. In most cases, not only the assignment of the variety due to the inequivalent sites (h - and k -sites in 4H-SiC) but also the identification of the defect species was accomplished through a comparison of the obtained HF parameters with those obtained from first-principles calculations. Work on identifying vacancy-related defects such as monovacancies, divacancies and antisite-vacancy pairs in 4H-SiC were reviewed. In addition, it was demonstrated that the observation of the central line of the TV2a center of S = 3/2 was achieved by pulsed-ELDOR.

EPR Identification of Intrinsic Defects in SiC. J.Isoya, T.Umeda, N.Mizuochi, N.T.Son, E.Janzén, T.Ohshima: Physica Status Solidi B, 2008, 245[7], 1298-314