A review was presented of recent photoluminescence, cathodoluminescence and micro-photoluminescence studies that were performed in order to investigate the electronic properties of as-grown and/or process-induced stacking faults in SiC epitaxial layers. For different polytypes and different acquisition conditions, the optical signature was considered and compared with the results of model calculations. Since a stacking fault was always a finite lamella of 3C or 8H polytype in a 4H or 6H matrix, successive account was taken of the effect of the valence band offsets, internal polarizations and non-homogeneity of the potential wells. In the case of cathodoluminescence and micro-photoluminescence techniques, due to the higher pumping level, it was shown that some screening of the built-in electric field could be attained.

Optical Properties of As-Grown and Process-Induced Stacking Faults in 4H-SiC. J.Camassel, S.Juillaguet: Physica Status Solidi B, 2008, 245[7], 1337-55