The effect of Ge alloying upon B diffusion in amorphous Si1−xGex alloys was reported for x = 0 to 0.24 (figure 4). The diffusivity was not observed to exhibit any transient decay. The diffusivity decreased with increasing Ge concentration. The activation energy for B diffusion appeared to increase from 2.8eV for amorphous Si to 3.6eV for amorphous Si0.76Ge0.24. It was suggested that, in these alloys, Ge distorted the amorphous Si network thereby increasing B trapping by Si.

Boron Diffusion in Amorphous Silicon-Germanium Alloys. L.A.Edelman, M.S.Phen, K.S.Jones, R.G.Elliman, L.M.Rubin: Applied Physics Letters, 2008, 92[17], 172108