The interdiffusion in SiGe alloys was studied by X-ray specular reflectivity using ex situ and in situ annealing experiments. The evolution of the Ge profile of strain-compensated Si/SiGe multilayers, due to high-temperature annealing, was reported. These multilayers were grown pseudomorphically and strain-symmetrized on relaxed Si0.75Ge0.25 and Si0.5Ge0.5 pseudo-substrates by molecular beam epitaxy at 330C. The multilayer structures were annealed at several temperatures around 590C and around 800C. From modelling the X-ray specular reflectivity scans at various stages of the interdiffused structures, interdiffusion coefficients were obtained; yielding the activation energy and the prefactor for interdiffusion corresponding to Si0.75Ge0.25 and Si0.5Ge0.5. The results obtained ex situ for Si0.5Ge0.5 and in situ for Si0.75Ge0.25 provided accurate values of diffusion parameters.

Interdiffusion in SiGe Alloys with Ge Contents of 25% and 50% Studied by X-ray Reflectivity. M.Meduna, J.Novák, G.Bauer, C.V.Falub, D.Grützmacher: Physica Status Solidi A, 2008, 205[10], 2441-8