The Ge composition dependence of the densities and energy levels of the acceptor-like defect states that were generated during the solid-source molecular beam epitaxy of SiGe films was investigated. Hall measurements in a wide temperature range were carried out, and a previously unreported very shallow acceptor-like state was found. Evidence was provided that the observed acceptor-like states were relevant to intrinsic point defects.

Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy. M.Satoh, K.Arimoto, K.Nakagawa, S.Koh, K.Sawano, Y.Shiraki, N.Usami, K.Nakajima: Japanese Journal of Applied Physics, 2008, 47, 4630-3