The velocity and activation energy of dislocation motions in P-implanted SiGe/Si heterostructures with a Ge content of 3% were determined by using an etching method and the X-ray Lang topography technique. The obtained results were compared with those of the original samples. P was implanted with an energy of 100keV and dose of 5 x 1012cm2. This implantation energy produced a peak concentration of P in the SiGe layer; at the same time, the low dose did not produce any observable defects in the SiGe layer. The temperature dependencies of dislocation velocities in the P-implanted samples were represented on an Arrhenius plot; the plot revealed that there was a decrease in the velocities and an increase in the activation energies of the dislocation motions in the P-implanted samples as compared to those of the original samples. The recovery of the dislocation velocity relative to that of the original samples was studied using various implantation species (P, N and O); it was found that the recovery began at temperatures of around 700C, irrespective of the nature of the implanted impurities. This indicates that certain types of defects, but not impurities, generated during the implantation influenced the dislocation motion. It was proposed that the reduction in the velocities and the increase in the activation energies of the dislocation motions were attributable to the generation of micro-defects, which offer resistance to the gliding motion of a threading dislocation.

Effect of Phosphorous Implantation on Threading Dislocation Motions in SiGe/Si Heterostructures. A.Hara: Journal of Applied Physics, 2008, 104[7], 076105