Crystals of {111} ZnTe with various densities of twin boundaries in the growth direction were produced at ∼670C by the chemical vapor deposition method with the vapor environment offset toward an excess of Zn. Defects were formed in conical crystallites (up to 5 mm in height and with lateral dimensions of 10–500μm at the bottom and up to 2 mm at the top) due to instabilities in the crystallization front, which arise because of convection-type heat and mass exchange in the oversaturated vapor medium. The influence of twin boundaries on the distribution of chemical impurities and the electronic spectrum of ZnTe was studied using X-ray diffractometry, scanning electron microscopy, and low-temperature photoluminescence (PL). It was found that rapid low-temperature growth of [111] ZnTe polycrystals from the vapor phase with an excessive Zn content favors the intensive formation of rotation and reflection twins. The incoherent [111] boundary of reflection twins was conductive to the separation and accumulation of impurities. In the regions of a crystal with a high density of reflection twins, exciton-impurity complexes (IC, IX) and a Y strip, which was usually related to extended defects (dislocations, twins, crystallite boundaries), were found in the low-temperature PL spectra. Additional studies show that I X was related to excitons trapped by neutral iso-electronic or charged defects and that I C was probably due to an impurity of group IV. Changes in the Photoluminescence Spectrum near Twin Boundaries in ZnTe Crystals Produced by Rapid Crystallization. V.S.Bagaev, Y.V.Klevkov, V.S.Krivobok, V.P.Martovitskiĭ, V.V.Zaĭtsev, S.G.Chernook, E.E.Onishchenko: Physics of the Solid State, 2008, 50[5], 808-14