The use of the differential processing of the temperature dependence of the concentration of free charge carriers was analyzed for semiconductors containing amphoteric centers with positive and negative correlation energies under different conditions of compensation. It was found that, in the differential characteristic, the height and position of the peak corresponding to the acceptor state depend on the degree of compensation. This situation could be misinterpreted as a result of changes in the concentration and energy spectrum of the centers in the band gap of the semiconductor or as a result of the formation of new defects, as dictated by the conditions of compensation.

Determination of the Energy and Concentration of Amphoteric Defects by Differential Processing of the Temperature Dependence of the Concentration of Free Charge Carriers. A.G.Nikitina, V.V.Zuev: Semiconductors, 2008, 42[4], 379-82