Features of the temperature dependence of the concentration of majority free charge carriers in semiconductors on temperature-dependent discharging of bistable centers differing in electrical activity were treated theoretically. Specifically, two-level acceptors, two-level donors, and amphoteric centers were considered. The effects of the level of compensation and the ratio between the binding energies of one and two electrons at a center upon the discharging were studied. The results were represented as features of the behavior of Hoffmann’s function.

Specific Features of the Generation-Recombination Properties of Bistable Defects in Semiconductors - Manifestation in Hoffmann’s Function. A.G.Nikitina, V.V.Zuev: Semiconductors, 2008, 42[10], 1171-8