The physical concepts developed to describe the transient activation of B during post-implantation annealing were based on the concurrent formation of complexes comprising B atoms and self-interstitials. A complete implementation into TCAD software leads to a high number of equations to be solved which was often inadmissible for multi-dimensional simulations. A minimum number of such complexes was taken into consideration here. It was shown that such a model was nevertheless able to reproduce the profile shape and dopant activation for a wide range of implantation and annealing conditions.

On a Computationally Efficient Approach to Boron-Interstitial Clustering. J.Schermer, A.Martinez-Limia, P.Pichler, C.Zechner, W.Lerch, S.Paul: Solid-State Electronics, 2008, 52[9], 1424-9