An X-ray rocking curve method was demonstrated which permitted detection of an asymmetry in the dislocation densities in an hetero-epitaxial (001) zincblende semiconductor layer. These dislocations existed on 2 types of slip systems with their misfit dislocation line segments oriented along either a [1¯10] direction (type A) or a [110] direction (type B). An imbalance in the densities of dislocations on these slip systems produced an observable azimuthal variation in the rocking curve width for symmetric X-ray reflections. An approximate quantitative model allows the estimation of the dislocation densities on the two types of slip systems.

X-ray Characterization of Dislocation Density Asymmetries in Heteroepitaxial Semiconductors. B.Yarlagadda, A.Rodriguez, P.Li, R.Velampati, J.F.Ocampo, E.N.Suarez, P.B.Rago, D.Shah, J.E.Ayers, F.C.Jain: Applied Physics Letters, 2008, 92[20], 202103