Three-dimensional grain-continuum models were used to study grain boundary migration, treating each grain with anisotropic elastic properties. Grain boundary speeds were computed by using a finite element method to calculate differences in strain energy density across grain boundaries. Body-fitted finite element meshes were used. An interface tracking program was used to develop starting structures and move the grain boundaries based upon these speeds. This procedure was demonstrated on textured films consisting of 〈100〉 and 〈111〉 fiber textured film. The model was also applied to a short section of a Cu line embedded in oxide. The relative impact of various driving forces for grain boundary motion was considered.

Stress-Induced Grain Boundary Migration in Polycrystalline Copper. M.O.Bloomfield, D.N.Bentz, T.S.Cale: Journal of Electronic Materials, 2008, 37[3], 249-63