The low-energy electron diffraction pattern of the SiC(00•1) (3 x 3) surface reconstruction underwent a change from (3 x 3) to (1 x 1) upon exposure to atomic hydrogen and deuterium. Using high-resolution electron energy loss spectroscopy, Auger electron spectroscopy and low-energy electron diffraction, it was determined that this change was due to disordering and etching of the uppermost Si layers. With increasing deuterium exposure at 320K, depletion of the Si adlayer and formation of SiD surface species was observed. At high deuterium exposures, observation of the C-D stretch mode indicated the onset of bulk silicon carbide etching. SiD2 and SiD3 surface species, known intermediates in the Si etching process, were observed with deuterium exposure at 180K.

Deuterium Etching of the Si-Rich SiC(0001) (3 x 3) Surface Reconstruction. C.R.Stoldt, C.Carraro, R.Maboudian: Surface Science, 2000, 466[1-3], 66-72