The (√3 x √3)R30° reconstruction on hexagonal 6H–SiC(00•1) surface and its properties were studied by using reflection high-energy electron diffraction and reflection high-energy electron diffraction multi-slice dynamical calculations. A Si coverage of 1/3 monolayer occupying the threefold-symmetric T4 or H3 sites develops upon a lower Si flux and/or at a higher annealing temperature and/or upon a longer time annealing. However, Si trimers centered on the T4 positions with 1 monolayer coverage could be another appropriate candidate for the (√3 x √3)R30° reconstruction obtained under a very Si-rich condition and/or at a lower annealing temperature and/or upon a shorter time annealing.

The (√3 x √3)R30° Reconstruction on Hexagonal 6H–SiC(0001) Surface with and without a Si Flux. Y.Han, T.Aoyama, A.Ichimiya, Y.Hisada, S.Mukainakano: Surface Science, 2001, 493[1-3], 238-45