The Si-rich 3C-SiC(001)-(3 x 2) surface was studied by high-resolution core-level photoemission. Well-resolved Si 2p and C 1s core-level spectra were measured at a temperature of ∼120K. Three different Si 2p surface components were clearly identified with binding energy shifts of -0.58, -0.92 and -1.27eV, respectively. The presence of these components and their intensity ratios were consistent with a structure model with 2/3ML of additional Si dimers but incompatible with another model with only 1/3ML of Si dimers. Assignments were made of the atomic origins of the Si 2p surface core levels and the line shape of the C 1s core level was discussed.

Surface Core Levels of the 3C SiC(001)3 x 2 Surface - Atomic Origins and Surface Reconstruction. H.W.Yeom, Y.C.Chao, S.Terada, S.Hara, S.Yoshida, R.I.G.Uhrberg: Physical Review B, 1997, 56, R15525-8