A diffusion equation for minority carriers in position and energy space was deduced. Further integration over the energy variable then led to the definition of a recombination rate which could be associated with any type of defect. When applied to the particular case of dislocations, it was found that the recombination process was made up of various steps which, to a first approximation, occurred in series. These steps were cascade capture of electrons and holes along shallow dislocation states, locked by a transition between the ground states of the energy levels. The results could be applied to the calculation of extrinsic dislocation EBIC contrast.

Theoretical Aspects of the Minority Carrier Recombination at Dislocations in Semiconductors. J.L.Farvacque: Materials Science and Engineering B, 1996, 42[1-3], 110-21