An investigation was made of β-SiC(100) c(2 x 2) surface reconstruction using atomically-resolved scanning tunnelling microscopy (filled and empty electronic states). The results indicate that, contrary to previous knowledge, the C≡C triple-bond dimers that compose this surface were asymmetric and all tilted in the same direction (i.e. not anticorrelated), which suggests a compressive stress along the dimer direction. Two specific defects were also identified: double dimer lines that were at the origin of antiphase boundaries, and missing dimers. In the latter case, the two nearest dimer neighbours along the dimer row were found to undergo a significant charge redistribution, leading to one of them being tilted in the opposite direction.

Scanning Tunnelling Microscopy Investigation of the C-Terminated β-SiC(100) c(2 x 2) Surface Reconstruction - Dimer Orientation, Defects and Antiphase Boundaries. V.Derycke, P.Soukiassian, A.Mayne, G.Dujardin: Surface Science, 2000, 446[1-2], L101-7