The first direct high-resolution observation was made of a β-SiC(100)-c(4 x 2) surface reconstruction. Flat surfaces having a long-range order were grown. Individual Si dimers were identified and form a centered pseudo-hexagonal pattern give a c(4 x 2) array. Further support for Si-dimer identification was provided by theoretical scanning tunnelling microscopy image calculations. The results suggest a model of dimer rows having alternatively up and down dimers within the row, in a so-called undulating type of arrangement reducing the surface stress. Hence the β-SiC(100)- and Si(100)-c(4 x 2) surface reconstructions were very different.

Direct Observation of a β-SiC(100)- c(4 x 2) Surface Reconstruction. P.Soukiassian, F.Semond, L.Douillard, A.Mayne, G.Dujardin, L.Pizzagalli, C.Joachim: Physical Review Letters, 1997, 78, 907-10