The drastic (3 x 3) reconstruction of 3C-SiC(111) was crystallographically determined by joint application of quantitative low-energy electron diffraction and holographic interpretation of diffraction intensities, scanning tunnelling microscopy, and Auger electron spectroscopy. The reconstruction was shown to be present also on the 4H- and 6H-SiC(00•1) surfaces, i.e., to be largely independent of the SiC polytype. It corresponds to a new type of semiconductor (n x n) surface restructuring characterized by a considerable reduction of surface dangling bonds. This was equivalent to a very effective passivation of the surfaces, favouring crystal growth by a step flow mechanism.

Crystallography of the (3 x 3) Surface Reconstruction of 3C-SiC(111), 4H-SiC(0001), and 6H-SiC(0001) Surfaces Retrieved by Low-Energy Electron Diffraction. J.Schardt, J.Bernhardt, U.Starke, K.Heinz: Physical Review B, 2000, 62, 10335-44