Epitaxial (√3 x √3)R30° ErSi1.7 films were grown on Si(111) by solid-phase epitaxy and examined in situ by ultra-high vacuum scanning tunnelling microscopy. Atomic resolution was achieved and the ErSi1.7(00•1) surfaces were found to exhibit a high degree of structural order. Together with photo-emission work, the analysis of high-resolution scanning tunnelling microscopy images showed that the surface atomic arrangement consisted basically of a buckled Si layer without vacancies. An additional corrugation reflecting the √3 superstructure in bulk was superimposed on the p(1 x 1) structure.

Surface Reconstruction of ErSi1.7(0001) Investigated by Scanning Tunnelling Microscopy. T.P.Roge, F.Palmino, C.Savall, J.C.Labrune, P.Wetzel, C.Pirri, G.Gewinner: Physical Review B, 1995, 51, 10998-1001