The formation of a stable (4 x 1) reconstruction of the chalcopyrite CuGaSe2(001) surface was reported. Using Ar+ ion-bombardment and annealing of epitaxial CuGaSe2 films grown on GaAs(001) substrates it was possible to obtain flat well-ordered surfaces exhibiting a clear (4 x 1) reconstruction. The cleanliness and structure were analyzed in situ by Auger electron spectroscopy and low-energy electron diffraction. Auger electron spectroscopy data suggest a slight Se-enrichment and Cu-depletion upon surface preparation. The results demonstrated that (001) surfaces of the Cu–III–VI2(001) material could exhibit stable non-faceted surfaces.

The CuGaSe2(001) Surface - a (4 x 1) Reconstruction. T.Deniozou, N.Esser, S.Siebentritt: Surface Science, 2005, 579[1], 100-6