An investigation was made of the growth of MgSe films of zincblende structure on ZnTe substrates by molecular beam epitaxy. The surface reconstruction of MgSe under different flux ratios and growth temperatures was studied systematically by reflection high-energy electron diffraction. A (4 x 1) reconstruction was observed under VI/II flux ratios of 16 to 30, while a (2 x 1) reconstruction appeared at higher VI/II ratios. The oscillation of reflection high-energy electron diffraction intensity at the first stage of MgSe growth indicated that 2D growth was achieved, and thereafter the growth mode changed to 3D growth due to the lattice mismatch. The structure of the MgSe layer was further confirmed by X-ray diffraction. The X-ray diffraction results indicated the growth of a MgSe film having a zincblende structure for a layer below 2000Å thick. No diffraction was observed from 2000 to 4000Å thick MgSe films. Thicker samples exhibited the formation of MgSe layers having a rock salt structure.

Surface Reconstruction and Crystal Structure of MgSe Films Grown on ZnTe Substrates by MBE. H.M.Wang, J.H.Chang, T.Hanada, K.Arai, T.Yao: Journal of Crystal Growth, 2000, 208[1-4], 253-8