An investigation was made of the dependence of the properties of Ge layer upon AlAs surface reconstruction in molecular beam epitaxial growth of Ge on AlAs(100). Hole mobility depended drastically on surface reconstruction, and it was greatly improved on (5 x 4)-reconstructed AlAs. Hole mobility as high as 564cm2/Vs with a sheet hole concentration of 1.1 x 1013/cm2 was obtained for 380nm-thick Ge. Moreover, the mobility of the surface region reached 1088cm2/Vs. The (5 x 4)-reconstructed AlAs surface was considered to have a roughly even coverage of Al and As. It was believed that charge neutrality at the interface suppresses surface segregation and/or diffusion.

Effect of the AlAs Surface Reconstruction on Properties of Ge Grown on AlAs. T.Maeda, H.Tanaka, M.Takikawa, K.Kasai: Journal of Crystal Growth, 1995, 150[1-4], 649-53