Angular distributions of Al+ and Ga+ ions desorbed by keV particle bombardment were measured from a modified AlxGa(1−x)As 001 (2 x 4) surface reconstruction. This surface was prepared from the GaAs 001 c(4 x 4) surface by deposition of one monolayer of aluminum in situ via molecular beam epitaxy. The surface was then annealed to 550K producing a (2 x 4) reconstruction. By comparing experimental angular distribution results with molecular dynamics simulations of the bombardment process, it was shown that Al and Ga segregate into different layers of the prepared (2 x 4) surface.

Angle-Resolved SIMS Studies of AlxGa1-xAs 001 (2 x 4) Surface Reconstruction. S.H.Goss, P.B.S.Kodali, B.J.Garrison, N.Winograd: Surface Science, 1997, 387[1-3], 44-9