Light absorption due to indirect electronic transitions, in a semiconductor in a quantizing magnetic field, was calculated under the assumption that an edge dislocation played the role of a third body. The characteristic light frequency and magnetic field dependences of the absorption coefficient were determined for the mechanisms considered.

Indirect Electronic Transitions in Semiconductors as a Result of the Scattering of Charge Carriers by Dislocations in a Quantized Magnetic Field. E.M.Kazaryan, K.A.Mkhoyan: Fizika i Tekhnika Poluprovodnikov, 1998, 32[4], 453-4 (Semiconductors, 1998, 32[4], 404-5)