Heterostructures of CdTe/GaAs(001) were fabricated by molecular beam epitaxy onto chemically etched and thermally deoxidized GaAs(001) substrates, as well as GaAs(001) (3 x 1) buffer layers grown in situ by molecular beam epitaxy. Various growth protocols were also explored, leading to Te-induced (6 x 1) or (2 x 1) surface reconstructions during the early growth stage. High-resolution cross-sectional transmission electron microscopy was used to examine the final interface structure resulting from the different substrate preparations, and surface reconstructions. The (2 x 1) surface reconstruction led to pure (001) growth, while the (6 x 1) reconstruction led to an interface which included small (111)-oriented inclusions. In addition, deposition on etched and de-oxidized GaAs(001) wafers led to preferential CdTe growth within etch pits and resulted in a macroscopically rough interface region.

Effects of Surface Reconstruction on CdTe/GaAs(001) Interface Structure. J.E.Angelo, W.W.Gerberich, C.Bratina, L.Sorba, A.Franciosi: Journal of Crystal Growth, 1993, 130[3-4], 459-65