The sub-monolayer growth by molecular beam epitaxy of InAs on the GaAs(001)-(2 x 4) surface was studied using rapid-quench scanning tunnelling microscopy. InAs islands exhibiting the (2 x 4) reconstruction were formed and show remarkably similar characteristics to GaAs sub-monolayer homo-epitaxy on this surface. Detailed analysis of the islands indicated that strain plays a negligible role in their nucleation, and the (2 x 4) reconstruction dominated both island growth and island anisotropy.

Island Size Scaling for Submonolayer Growth of InAs on GaAs(001)-(2 x 4) - Strain and Surface Reconstruction Effects. G.R.Bell, T.J.Krzyzewski, P.B.Joyce, T.S.Jones: Physical Review B, 2000, 61, R10551-4