Anisotropic surface stress associated with the different surface reconstructions of (001)GaAs was measured in situ in a molecular beam epitaxy system. An optical deflection technique was used on [1¯10] and [110] oriented cantilevers fabricated on thinned wafer areas. Changes in surface stress, associated with the As and Ga dimer surface coverage for c(4 x 4), 2 x 4, 3 x 1 and 4 x 2 reconstructions, were observed as the substrate temperature and impinging molecular flux were varied. Deflection oscillations could be detected also during molecular beam epitaxial growth relating surface stress to surface roughness or step density. Sensitivity and stability of this technique demonstrated its usefulness as a tool to study in situ a variety of surface kinetics and incorporation phenomena.

In situ Observation of Reconstruction Related Surface Stress during Molecular Beam Epitaxy Growth of III–V Compounds. J.P.Silveira, F.Briones: Journal of Crystal Growth, 1999, 201-202, 113-7