Surface reconstruction of GaAs (001) during organometallic chemical vapour deposition growth was investigated using reflectance-difference spectroscopy. Reflectance-difference spectra revealed that a surface reconstructions similar or identical to (4 x 2), (2 x 4), and c(4 x 4), that occurred on surfaces prepared by molecular beam epitaxy in ultra-high vacuum, occurred even in atmospheric pressure organometallic chemical vapour deposition-growth environments. The structure of surfaces was studied under both static and dynamic conditions in non ultra-high vacuum ambients. It was found, in contrast to previous models, that the surfaces under various non ultra-high vacuum conditions exhibited dimer formation. In addition, organometallic chemical vapour deposition growth and atomic layer epitaxy typically occurred under disordered c(4 x 4)[d(4 x 4)]-like conditions where the surface was terminated by multilayers of As. When trimethylgallium and AsH3 were supplied simultaneously, the surface structure varied as a function of the supply rates of trimethylgallium and AsH3, and the substrate temperature.

Surface Reconstruction of GaAs (001) during OMCVD Growth. I.Kamiya, D.E.Aspnes, H.Tanaka, L.T.Florez, M.A.Koza, R.Bhat, J.P.Harbison: Philosophical Transactions of the Royal Society, 1993, 344[1673], 443-52